Moter Driver Aec-Q101 Qualifieaec-Q101 Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet

Model NO.
OSG65R099HSZAF TO247
Transport Package
Carton
Specification
35x30x37cm
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20kkkk/Monthly
Reference Price
$ 1.62 - 1.80
Contact Us

Product Description

General Description
The GreenMOS ® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS ® Z series is integrated with fast recovery dio d e (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features                                                                                                    
  • Low R DS(on) & FOM
  • Extremely low switching loss
  • Excellent stability and uniformity
  • Ultra-fast and robust body diode
  • AEC-Q101 Qualified for Automotive Application

Applications
  • PC power
  • Telecom power
  • Server power
  • EV Charger
  • Motor driver

Key Performance Parameters

 
Parameter Value Unit
V DS 650 V
I D, pulse 96 A
R DS(ON), max @ V GS =10V 99 mΩ
Q g 66.6 nC

Marking Information

 
Product Name Package Marking
OSG65R099HSZAF TO247 OSG65R099HSZA


The HTRB test was performed at 600V more strictly than the AEC-Q101 rev.C (80% V (BR)DSS ). All the other tests were performed according to AEC Q101 rev. E.
 
Absolute Maximum Ratings at T j =25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain-source voltage V DS 650 V
Gate-source voltage V GS ±30 V
Continuous drain current 1) , T C =25 °C
I D 		32
A
Continuous drain current 1) , T C =100 °C 20
Pulsed drain current 2) , T C =25 °C I D, pulse 96 A
Continuous diode forward current 1) , T C =25 °C I S 32 A
Diode pulsed current 2) , T C =25 °C I S, pulse 96 A
Power   dissipation 3)   , T C =25   °C P D 278 W
Single pulsed avalanche energy 5) E AS 648 mJ
MOSFET dv/dt ruggedness, V DS =0…480 V dv/dt 50 V/ns
Reverse diode dv/dt, V DS =0…480 V, I SD ≤I D dv/dt 50 V/ns
Operation and storage temperature T stg , T j -55 to 150 °C

Thermal Characteristics
 
Parameter Symbol Value Unit
Thermal resistance, junction- case R θJC 0.45 °C/W
Thermal resistance, junction- ambient 4) R θJA 62 °C/W

Electrical Characteristics at T j =25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source breakdown voltage BV DSS 650     V V GS =0 V, I D =1 mA
Gate threshold voltage V GS(th) 3.0   4.5 V V DS =V GS , I D =1 mA

Drain-source on- state resistance
R DS(ON) 		  0.090 0.099
Ω 		V GS =10 V, I D =16 A
  0.21   V GS =10 V, I D =16 A, T j =150 °C
Gate-source leakage current
I GSS 		    100
nA 		V GS =30 V
    - 100 V GS =-30 V
Drain-source leakage current I DSS     10 μA V DS =650 V, V GS =0 V
Gate resistance R G   7.8   Ω ƒ=1 MHz, Open drain

Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance C iss   3988   pF
V GS =0 V, V DS =50 V,
ƒ=100 kHz
Output capacitance C oss   210   pF
Reverse transfer capacitance C rss   7.4   pF
Effective output capacitance, energy related C o(er)   124   pF
V GS =0 V, V DS =0 V-400 V
Effective output capacitance, time related C o(tr)   585   pF
Turn-on delay time t d(on)   46.0   ns
V GS =10 V, V DS =400 V, R G =2 Ω, I D =20 A
Rise time t r   60.3   ns
Turn-off delay time t d(off)   93.0   ns
Fall time t f   3.7   ns

Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Q g   66.6   nC

V GS =10 V, V DS =400 V, I D =20 A
Gate-source charge Q gs   20.6   nC
Gate-drain charge Q gd   24.8   nC
Gate plateau voltage V plateau   6.7   V

Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage V SD     1.3 V I S =32 A, V GS =0 V
Reverse recovery time t rr   151.7   ns
I S =20 A,
di/dt=100 A/μs
Reverse recovery charge Q rr   1.0   μC
Peak reverse recovery current I rrm   12.3   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. V DD =100 V, V GS =10 V, L=80 mH, starting T j =25 °C.
 
Moter Driver Aec-Q101 Qualifieaec-Q101 Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet
 
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