Boost Pfc Server Power Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet

Model NO.
OSG65R099HSZAF TO247
Transport Package
Air
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20kkkk/Monthly
Reference Price
$ 1.62 - 1.80
Contact Us

Product Description

General Description
The GreenMOS ® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS ® Z series is integrated with fast recovery dio d e (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features                                                                                                    
  • Low R DS(on) & FOM
  • Extremely low switching loss
  • Excellent stability and uniformity
  • Ultra-fast and robust body diode
  • AEC-Q101 Qualified for Automotive Application

Applications
  • PC power
  • Telecom power
  • Server power
  • EV Charger
  • Motor driver

Key Performance Parameters

 
Parameter Value Unit
V DS 650 V
I D, pulse 96 A
R DS(ON), max @ V GS =10V 99 mΩ
Q g 66.6 nC

Marking Information

 
Product Name Package Marking
OSG65R099HSZAF TO247 OSG65R099HSZA


The HTRB test was performed at 600V more strictly than the AEC-Q101 rev.C (80% V (BR)DSS ). All the other tests were performed according to AEC Q101 rev. E.
 
Absolute Maximum Ratings at T j =25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain-source voltage V DS 650 V
Gate-source voltage V GS ±30 V
Continuous drain current 1) , T C =25 °C
I D 		32
A
Continuous drain current 1) , T C =100 °C 20
Pulsed drain current 2) , T C =25 °C I D, pulse 96 A
Continuous diode forward current 1) , T C =25 °C I S 32 A
Diode pulsed current 2) , T C =25 °C I S, pulse 96 A
Power   dissipation 3)   , T C =25   °C P D 278 W
Single pulsed avalanche energy 5) E AS 648 mJ
MOSFET dv/dt ruggedness, V DS =0…480 V dv/dt 50 V/ns
Reverse diode dv/dt, V DS =0…480 V, I SD ≤I D dv/dt 50 V/ns
Operation and storage temperature T stg , T j -55 to 150 °C

Thermal Characteristics
 
Parameter Symbol Value Unit
Thermal resistance, junction- case R θJC 0.45 °C/W
Thermal resistance, junction- ambient 4) R θJA 62 °C/W

Electrical Characteristics at T j =25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source breakdown voltage BV DSS 650     V V GS =0 V, I D =1 mA
Gate threshold voltage V GS(th) 3.0   4.5 V V DS =V GS , I D =1 mA

Drain-source on- state resistance
R DS(ON) 		  0.090 0.099
Ω 		V GS =10 V, I D =16 A
  0.21   V GS =10 V, I D =16 A, T j =150 °C
Gate-source leakage current
I GSS 		    100
nA 		V GS =30 V
    - 100 V GS =-30 V
Drain-source leakage current I DSS     10 μA V DS =650 V, V GS =0 V
Gate resistance R G   7.8   Ω ƒ=1 MHz, Open drain

Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance C iss   3988   pF
V GS =0 V, V DS =50 V,
ƒ=100 kHz
Output capacitance C oss   210   pF
Reverse transfer capacitance C rss   7.4   pF
Effective output capacitance, energy related C o(er)   124   pF
V GS =0 V, V DS =0 V-400 V
Effective output capacitance, time related C o(tr)   585   pF
Turn-on delay time t d(on)   46.0   ns
V GS =10 V, V DS =400 V, R G =2 Ω, I D =20 A
Rise time t r   60.3   ns
Turn-off delay time t d(off)   93.0   ns
Fall time t f   3.7   ns

Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Q g   66.6   nC

V GS =10 V, V DS =400 V, I D =20 A
Gate-source charge Q gs   20.6   nC
Gate-drain charge Q gd   24.8   nC
Gate plateau voltage V plateau   6.7   V

Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage V SD     1.3 V I S =32 A, V GS =0 V
Reverse recovery time t rr   151.7   ns
I S =20 A,
di/dt=100 A/μs
Reverse recovery charge Q rr   1.0   μC
Peak reverse recovery current I rrm   12.3   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. V DD =100 V, V GS =10 V, L=80 mH, starting T j =25 °C.
 
Boost Pfc Server Power Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet
Boost Pfc Server Power Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet Boost Pfc Server Power Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet Boost Pfc Server Power Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet Boost Pfc Server Power Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet Boost Pfc Server Power Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet Boost Pfc Server Power Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet Boost Pfc Server Power Osg65r099hszaf To247 Vds 650V RDS99mΩ Mosfet


 
 





 

 

Other Car Electronics

JCTK.CO.UK, 2023